类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
波长: | 640nm |
电压 - 输入: | 2.3V |
额定电流(安培): | 550mA |
功率(瓦): | 2.1W |
包/箱: | TO-90-2 Lens Top Metal Can |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GH0781JA2CSharp Microelectronics |
LASER DIODE 784NM 120MW TO18 |
|
OPV320TT Electronics / Optek Technology |
LASER DIODE 850NM 1.5MW PILL |
|
015292Excelitas Technologies |
LASER MODULE 561NM 20MW |
|
OPV315YATTT Electronics / Optek Technology |
LASER DIODE 850NM 0.75MW PNL ST |
|
VOL6405IUS-Lasers, Inc. |
LASER DIODE 640NM 4.8MW 10.4MM |
|
M6405IUS-Lasers, Inc. |
LASER DIODE 640NM 5MW 10.4MM DIA |
|
OED-LD65001ELumex, Inc. |
LASER DIODE 650NM 5MW TO18 |
|
VLM-532-43 SPAQuarton, Inc. |
LASER DIODE 532NM 5MW 10.5MM DIA |
|
GH06550B2BSharp Microelectronics |
LASER DIODE 654NM 50MW TO18 |
|
VLM-532-43-SCAQuarton, Inc. |
LASER DIODE 532NM 5MW |
|
COM-09906SparkFun |
LASER DIODE 532NM 5MW 12MM DIA |
|
VOL6605IUS-Lasers, Inc. |
LASER DIODE 660NM 4.8MW 10.4MM |
|
GH06507B2ASharp Microelectronics |
LASER DIODE 654NM 7MW TO18 |