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| 类型 | 描述 |
|---|---|
| 系列: | P6KE |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 70.1V |
| 电压 - 击穿（分钟）: | 77.9V |
| 电压 - 钳位（最大值）@ ipp: | 113V |
| 电流 - 峰值脉冲 (10/1000µs): | 5.5A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AC, DO-15, Axial |
| 供应商设备包: | DO-204AC (DO-15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DF3D6.8MS,LFToshiba Electronic Devices and Storage Corporation |
TVS DIODE 5VWM 11VC |
|
MXL5KP14AE3Roving Networks / Microchip Technology |
TVS DIODE 14V 23.2V CASE 5A |
|
SMA6J11A-M3/61Vishay General Semiconductor – Diodes Division |
TVS DIODE 11V 17.2V DO214AC |
|
1.5KE220A-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 185V 328V 1.5KE |
|
MXSMBJ7.5CARoving Networks / Microchip Technology |
TVS DIODE 7.5V 12.9V DO214AA |
|
MSMBG60AE3Roving Networks / Microchip Technology |
TVS DIODE 60V 96.8V DO215AA |
|
1KSMB24CAHM4GTSC (Taiwan Semiconductor) |
TVS DIODE 20.5V 33.2V DO214AA |
|
MA5KP5.0ARoving Networks / Microchip Technology |
TVS DIODE 5V 9.2V DO204AR |
|
1SMB6.5CA TR13 PBFREECentral Semiconductor |
TVS DIODE 6.5V 11.2V SMB |
|
SMAJ17A-M3/5AVishay General Semiconductor – Diodes Division |
TVS DIODE 17V 27.6V DO214AC |
|
BZW04-28-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 28.2V 45.7V DO204AL |
|
BZW04-14BHE3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 13.6V 22.5V DO204AL |
|
SMBJ85A R5GTSC (Taiwan Semiconductor) |
TVS DIODE 85V 137V DO214AA |
