类型 | 描述 |
---|---|
系列: | Mosorb™ |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 23.1V |
电压 - 击穿(分钟): | 25.7V |
电压 - 钳位(最大值)@ ipp: | 37.5V |
电流 - 峰值脉冲 (10/1000µs): | 40A |
功率-峰值脉冲: | 1500W (1.5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-201AD, Axial |
供应商设备包: | Axial |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
P4KE120CA R0GTSC (Taiwan Semiconductor) |
TVS DIODE 102V 165V DO204AL |
|
MXLSMBG150ARoving Networks / Microchip Technology |
TVS DIODE 150V 243V DO215AA |
|
P4KE480A-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 408V 658V DO204AL |
|
MASMBJ30ARoving Networks / Microchip Technology |
TVS DIODE 30V 48.4V DO214AA |
|
MXLSMLJ24CAE3Roving Networks / Microchip Technology |
TVS DIODE 24V 38.9V DO214AB |
|
SMF4L45AWickmann / Littelfuse |
TVS DIODE 45V 72.7V SOD123FL |
|
MXLSMBG110CAE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO215AA |
|
GSOT36C-HE3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 36V 71V SOT23 |
|
MA1.5KE220AE3Roving Networks / Microchip Technology |
TVS DIODE 185V 328V DO204AR |
|
SMFE78APowerStor (Eaton) |
TVS DIODE 78V 126VC 200W SOD123F |
|
SM8S12ATHE3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 12V 19.9V DO218AC |
|
5KP26A-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 26V 42.1V P600 |
|
SA7.5CA A0GTSC (Taiwan Semiconductor) |
TVS DIODE 7.5V 12.9V DO204AC |