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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 6V |
| 电压 - 击穿（分钟）: | 6.67V |
| 电压 - 钳位（最大值）@ ipp: | 10.3V |
| 电流 - 峰值脉冲 (10/1000µs): | 291.3A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MXSMLJ14CAE3Roving Networks / Microchip Technology |
TVS DIODE 14V 23.2V DO214AB |
|
SA64AHE3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 64V 103V DO204AC |
|
MSMCG36AE3Roving Networks / Microchip Technology |
TVS DIODE 36V 58.1V DO215AB |
|
SMBJ17A-QJ.W. Miller / Bourns |
TVS DIODE 17V 27.6V SMB |
|
SMAJ33A R3GTSC (Taiwan Semiconductor) |
TVS DIODE 33V 53.3V DO214AC |
|
P6KE82CA R0GTSC (Taiwan Semiconductor) |
TVS DIODE 70.1V 113V DO204AC |
|
JANTX1N6473Roving Networks / Microchip Technology |
TVS DIODE 24V 41.4V AXIAL |
|
1N6281A-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 23.1V 37.5V 1.5KE |
|
PGSMAJ48CAHE3GTSC (Taiwan Semiconductor) |
DIODE, TVS, BIDIRECTIONAL |
|
SMAJ13CA-13-FZetex Semiconductors (Diodes Inc.) |
TVS DIODE 13V 21.5V SMA |
|
SMBJ5.0CA-E3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 5V 9.2V DO214AA |
|
MSMBG51ARoving Networks / Microchip Technology |
TVS DIODE 51V 82.4V DO215AA |
|
MSQA6V1W5T2GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 3V SC88A |
