English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 600mOhm @ 4.1A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 390 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.7W (Ta), 60W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFZ46NLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 53A TO262 |
|
FDFS2P102ARochester Electronics |
MOSFET P-CH 20V 3.3A 8SOIC |
|
NTD4909NT4GRochester Electronics |
MOSFET N-CH 30V 8.8A/41A DPAK |
|
IRFP9240PBFVishay / Siliconix |
MOSFET P-CH 200V 12A TO247-3 |
|
FQPF10N50CFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 10A TO220F |
|
IPN80R2K0P7ATMA1IR (Infineon Technologies) |
MOSFET N-CHANNEL 800V 3A SOT223 |
|
AON7240Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 19A/40A 8DFN |
|
SIR626DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 100A PPAK SO-8 |
|
ZVP2106GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 450MA SOT223 |
|
SIR500DP-T1-RE3Vishay / Siliconix |
N-CHANNEL 30 V (D-S) 150C MOSFET |
|
FDB42AN15A0Rochester Electronics |
MOSFET N-CH 150V 5A/35A TO263AB |
|
AUIRFR4104TRLRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
PMZ130UNEYLNexperia |
MOSFET N-CH 20V 1.8A DFN1006-3 |
