English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.7A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 200mOhm @ 1A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 11 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 310 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.3W (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | 4-DIP, Hexdip, HVMDIP |
| 包/箱: | 4-DIP (0.300", 7.62mm) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFI540NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 20A TO220AB FP |
|
AUIRF3805LRochester Electronics |
MOSFET N-CH 55V 160A TO262 |
|
SPW55N80C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 54.9A TO247-3 |
|
IXTA3N50D2Wickmann / Littelfuse |
MOSFET N-CH 500V 3A TO263 |
|
BSP230,135Nexperia |
MOSFET P-CH 300V 210MA SOT223 |
|
CSD17559Q5TTexas Instruments |
MOSFET N-CH 30V 100A 8VSON |
|
STP11NK40ZFPSTMicroelectronics |
MOSFET N-CH 400V 9A TO220FP |
|
IPP60R022S7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 23A TO220-3 |
|
AOB10N60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 10A TO263 |
|
NDP4060Rochester Electronics |
MOSFET N-CH 60V 15A TO220-3 |
|
TSM230N06CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 34A TO252 |
|
NDS356APSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 1.1A SUPERSOT3 |
|
ZXMN0545G4TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 450V 140MA SOT-223 |
