English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 295mOhm @ 4A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 42 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1190 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta), 5.9W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM150P04LCS RLGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 40V 22A 8SOP |
|
3LP01M-TL-ERochester Electronics |
MOSFET P-CH 30V 100MA 3MCP |
|
BSC123N10LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 10.6/71A 8TDSON |
|
STB20N95K5STMicroelectronics |
MOSFET N-CH 950V 17.5A D2PAK |
|
RQ3L090GNTBROHM Semiconductor |
MOSFET N-CH 60V 9A/30A 8HSMT |
|
DMN6013LFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 10.3A PWRDI3333 |
|
FQPF30N06Rochester Electronics |
MOSFET N-CH 60V 21A TO220F |
|
RE1J002YNTCLROHM Semiconductor |
MOSFET N-CH 50V 200MA EMT3F |
|
AONR32314Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 17A/30A 8DFN |
|
IPA65R280C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 13.8A TO220 |
|
SIHH120N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 24A PPAK 8 X 8 |
|
IRF530SPBFVishay / Siliconix |
MOSFET N-CH 100V 14A TO263 |
|
TPCA8051-H(T2L1,VMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 28A 8SOP |
