类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | GaNFET (Gallium Nitride) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 41mOhm @ 32A, 8V |
vgs(th) (最大值) @ id: | 2.65V @ 700µA |
栅极电荷 (qg) (max) @ vgs: | 42 nC @ 8 V |
vgs (最大值): | ±18V |
输入电容 (ciss) (max) @ vds: | 2197 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 178W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247-3 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTHD4N02FT1Rochester Electronics |
MOSFET N-CH 20V 2.9A CHIPFET |
|
FQPF5N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4.5A TO220F |
|
RSJ650N10TLROHM Semiconductor |
MOSFET N-CH 100V 65A LPTS |
|
IXFH230N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 230A TO247AD |
|
IRF3805S-7PPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 160A D2PAK |
|
IPS060N03LGAKMA1Rochester Electronics |
MOSFET N-CH 30V 50A TO251-3 |
|
IRL620SPBFVishay / Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
|
DMG2302UK-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2.8A SOT23 |
|
BUK9535-100A,127Rochester Electronics |
MOSFET N-CH 100V 41A TO220AB |
|
PMPB8XNXNexperia |
MOSFET N-CH 20V 10.1A 6DFN |
|
FQT4N20TFRochester Electronics |
MOSFET N-CH 200V 850MA SOT223-4 |
|
NDD03N60ZT4GRochester Electronics |
MOSFET N-CH 600V 2.6A DPAK |
|
AOTF7N65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 7A TO220-3F |