English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.1A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 42mOhm @ 5.7A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 24 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.3W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PXP9R1-30QLJNexperia |
PXP9R1-30QL/SOT8002/MLPAK33 |
|
IRFB3806PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 43A TO220AB |
|
STD6N60DM2STMicroelectronics |
MOSFET N-CH 600V 5A DPAK |
|
IRLR7843TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 161A DPAK |
|
PHT11N06LT,135Rochester Electronics |
MOSFET N-CH 55V 4.9A/10.7A SC73 |
|
BUK9M10-30EXNexperia |
MOSFET N-CH 30V 54A LFPAK33 |
|
STD10P10F6STMicroelectronics |
MOSFET P-CH 100V 10A DPAK |
|
DMP2010UFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 12.7A PWRDI3333 |
|
STP21N65M5STMicroelectronics |
MOSFET N-CH 650V 17A TO220AB |
|
DMN2230U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2A SOT23-3 |
|
SFT1345-HRochester Electronics |
MOSFET P-CH 100V 11A TP |
|
SI7328DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 35A PPAK 1212-8 |
|
FDMS8670SRochester Electronics |
MOSFET N-CH 30V 20A/42A 8PQFN |
