English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 850mOhm @ 4.8A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 38 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1018 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP030N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TO220-3 |
|
2N7002-HFComchip Technology |
MOSFET N-CH 60V 250MA SOT23 |
|
BSP318SH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 2.6A SOT223-4 |
|
ISL9N303AS3Rochester Electronics |
MOSFET N-CH 30V 75A I2PAK |
|
RD3U080CNTL1ROHM Semiconductor |
MOSFET N-CH 250V 8A TO252 |
|
RQ6E035ATTCRROHM Semiconductor |
MOSFET P-CH 30V 3.5A TSMT6 |
|
IPB90N06S404ATMA2Rochester Electronics |
MOSFET N-CH 60V 90A D2PAK |
|
RTL020P02FRATRROHM Semiconductor |
MOSFET P-CH 20V 2A TUMT6 |
|
TP65H300G4LSGTransphorm |
GANFET N-CH 650V 6.5A 3PQFN |
|
IRFS3006-7PPBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
FDB8870Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
NX2301P,215Nexperia |
MOSFET P-CH 20V 2A TO236AB |
|
RTR025N03HZGTLROHM Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3 |
