English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.2Ohm @ 2.5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 23 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1150 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 195W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDMC8010DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 37A 8PQFN |
|
APT6021SFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 29A D3PAK |
|
SUD15N15-95-E3Vishay / Siliconix |
MOSFET N-CH 150V 15A TO252 |
|
SI7370DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 9.6A PPAK SO-8 |
|
FQA38N30Rochester Electronics |
38.4A, 300V, N-CHANNEL, MOSFET |
|
IPI80N06S2L11AKSA2Rochester Electronics |
MOSFET N-CH 55V 80A TO262-3 |
|
NVMFS6B25NLT1GRochester Electronics |
MOSFET N-CH 100V 8A/33A 5DFN |
|
APT12080LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 16A TO264 |
|
IRLR8726PBFRochester Electronics |
MOSFET N-CH 30V 86A DPAK |
|
IPB80N04S2L03ATMA1Rochester Electronics |
MOSFET N-CH 40V 80A TO263-3 |
|
SIE874DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 60A 10POLARPAK |
|
IPD75N04S406Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDS86267PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 2.2A 8SOIC |
