类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 150 V |
电流 - 连续漏极 (id) @ 25°c: | 15A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 95mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA (Min) |
栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 900 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.7W (Ta), 62W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252, (D-Pak) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI7370DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 9.6A PPAK SO-8 |
|
FQA38N30Rochester Electronics |
38.4A, 300V, N-CHANNEL, MOSFET |
|
IPI80N06S2L11AKSA2Rochester Electronics |
MOSFET N-CH 55V 80A TO262-3 |
|
NVMFS6B25NLT1GRochester Electronics |
MOSFET N-CH 100V 8A/33A 5DFN |
|
APT12080LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 16A TO264 |
|
IRLR8726PBFRochester Electronics |
MOSFET N-CH 30V 86A DPAK |
|
IPB80N04S2L03ATMA1Rochester Electronics |
MOSFET N-CH 40V 80A TO263-3 |
|
SIE874DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 60A 10POLARPAK |
|
IPD75N04S406Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDS86267PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 150V 2.2A 8SOIC |
|
MCB130N10Y-TPMicro Commercial Components (MCC) |
MOSFET N-CH 100V 130A D2PAK |
|
IRFS7730TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 75V 240A D2PAK |
|
SPB03N60C3ATMA1Rochester Electronics |
MOSFET N-CH 650V 3.2A TO263-3 |