类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 500mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 700mOhm @ 600mA, 4.5V |
vgs(th) (最大值) @ id: | 900mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 0.75 nC @ 4.5 V |
vgs (最大值): | ±6V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 250mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SC-89-3 |
包/箱: | SC-89, SOT-490 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRLM120ATFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 2.3A SOT223-4 |
|
APT20M22LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A TO264 |
|
SPA07N60CFDXKSA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
IPDH6N03LAGRochester Electronics |
PFET, 50A I(D), 25V, 0.006OHM, 1 |
|
SQ4401EY-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 17.3A 8SO |
|
APT51F50JRoving Networks / Microchip Technology |
MOSFET N-CH 500V 51A ISOTOP |
|
DMP510DL-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 50V 180MA SOT23 |
|
CSD16327Q3TTexas Instruments |
MOSFET N-CH 25V 60A 8VSON |
|
IXFR20N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 13A ISOPLUS247 |
|
DMN6066SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3.7A 8SO |
|
STP27N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 20A TO220 |
|
STW43N60DM2STMicroelectronics |
MOSFET N-CH 600V 34A TO247 |
|
SI7113ADN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 100V 10.8A PPAK |