English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Z-FET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 1700 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 20V |
| rds on (max) @ id, vgs: | 1.1Ohm @ 2A, 20V |
| vgs(th) (最大值) @ id: | 2.4V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 13 nC @ 20 V |
| vgs (最大值): | +25V, -10V |
| 输入电容 (ciss) (max) @ vds: | 191 pF @ 1000 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 69W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQB15P12TMRochester Electronics |
MOSFET P-CH 120V 15A D2PAK |
|
QS5U27TRROHM Semiconductor |
MOSFET P-CH 20V 1.5A TSMT5 |
|
SQP120N10-3M8_GE3Vishay / Siliconix |
MOSFET N-CH 100V 120A TO220AB |
|
FDY300NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 600MA SC89-3 |
|
NTMFS4923NET3GRochester Electronics |
MOSFET N-CH 30V 12.7A/91A 5DFN |
|
RV8C010UNHZGG2CRROHM Semiconductor |
MOSFET N-CH 20V 1A DFN1010-3W |
|
IXFZ140N25TWickmann / Littelfuse |
MOSFET N-CH 250V 100A DE475 |
|
STD150N3LLH6STMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
|
NTMFS4833NAT1GRochester Electronics |
MOSFET N-CH 30V 16A/191A 5DFN |
|
TSM60NB380CF C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 11A ITO220S |
|
R6008FNJTLROHM Semiconductor |
MOSFET N-CH 600V 8A LPTS |
|
STB170NF04STMicroelectronics |
MOSFET N-CH 40V 80A D2PAK |
|
BSC079N10NSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 13.4A 8TDSON |
