English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | aMOS™ |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 37A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 99mOhm @ 21A, 10V |
| vgs(th) (最大值) @ id: | 3.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 2154 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 417W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQD7P20TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 5.7A DPAK |
|
RJK03B9DPA-00#J53Rochester Electronics |
MOSFET N-CH 30V 30A 8WPAK |
|
ZXMP6A13FQTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 900MA SOT23 |
|
SQ7414AEN-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 16A PPAK1212-8 |
|
CSD17304Q3Texas Instruments |
MOSFET N-CH 30V 15A/56A 8VSON |
|
VS-FC420SA15Vishay General Semiconductor – Diodes Division |
MOSFET N-CH 150V 400A SOT227 |
|
RM6N100S4VRectron USA |
MOSFET N-CH 100V 6A SOT223-3 |
|
DMP6350SQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 1.5A SOT23 |
|
NTTFSC4823NTAGRochester Electronics |
MOSFET 30V 50A 8WDFN |
|
IRF3710LPBFRochester Electronics |
IRF3710 - 12V-300V N-CHANNEL POW |
|
SKI07171Sanken Electric Co., Ltd. |
MOSFET N-CH 75V 46A TO263 |
|
RT1A040ZPTRROHM Semiconductor |
MOSFET P-CH 12V 4A TSST8 |
|
IPD80R1K2P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4.5A TO252-3 |
