类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 36A (Ta), 85A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 3mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 24 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1590 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 6.2W (Ta), 42W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-DFN (5x6) |
包/箱: | 8-PowerSMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PSMNR58-30YLHXNexperia |
MOSFET N-CH 30V 300A LFPAK56 |
|
RQ3E100ATTBROHM Semiconductor |
MOSFET P-CH 30V 10A/31A 8HSMT |
|
HUF76139S3STKRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI2392ADS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 3.1A SOT23-3 |
|
IPA65R600E6Rochester Electronics |
IPA65R600 - 650V AND 700V COOLMO |
|
RSD175N10TLROHM Semiconductor |
MOSFET N-CH 100V 17.5A CPT3 |
|
APT30M85BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 300V 40A TO247 |
|
NTMFS4C01NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 47A/303A 5DFN |
|
IPN80R750P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 7A SOT223 |
|
BUK9624-55A,118Nexperia |
MOSFET N-CH 55V 46A D2PAK |
|
IPB80N04S4L04ATMA1Rochester Electronics |
MOSFET N-CH 40V 80A TO263-3-2 |
|
STP28N60DM2STMicroelectronics |
MOSFET N-CH 600V 21A TO220 |
|
DMT8012LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 44A TO252 |