English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 17A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 70mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 370 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.8W (Ta), 45W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-PAK (TO-252AA) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVGS3443T1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.1A 6TSOP |
|
BSL211SPL6327Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
IPP100N04S2L03AKSA2Rochester Electronics |
MOSFET N-CH 40V 100A TO220-3 |
|
FDB6690SRochester Electronics |
MOSFET N-CH 30V 42A TO263AB |
|
IXTP48P05TWickmann / Littelfuse |
MOSFET P-CH 50V 48A TO220AB |
|
IRF9332TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 9.8A 8SO |
|
IPB70N04S406ATMA1Rochester Electronics |
MOSFET N-CH 40V 70A TO263-3-2 |
|
FQB7N60TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.4A D2PAK |
|
SIHP14N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 13A TO220AB |
|
FDP6670ALRochester Electronics |
MOSFET N-CH 30V 80A TO220-3 |
|
IRF1324PBFIR (Infineon Technologies) |
MOSFET N-CH 24V 195A TO220AB |
|
RJK03B7DPA-00#J53Rochester Electronics |
MOSFET N-CH 30V 30A 8WPAK |
|
RD3H200SNFRATLROHM Semiconductor |
MOSFET N-CH 45V 20A TO252 |
