English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 360mOhm @ 2A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 185 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-223 |
| 包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM020N04LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 170A 8PDFN |
|
MMDF6N02HDR2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIHP22N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 22A TO220AB |
|
STP25N10F7STMicroelectronics |
MOSFET N-CH 100V 25A TO220 |
|
STP45NF06STMicroelectronics |
MOSFET N-CH 60V 38A TO220AB |
|
DMS3012SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 12A POWERDI3333 |
|
IXTH50P10Wickmann / Littelfuse |
MOSFET P-CH 100V 50A TO247 |
|
ISC045N03L5SATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 18A/63A TDSON |
|
FDPF041N06BL1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 7 |
|
BUK9540-100A,127Rochester Electronics |
MOSFET N-CH 100V 39A TO220AB |
|
IRFB61N15DPBFRochester Electronics |
MOSFET N-CH 150V 60A TO220AB |
|
SUM110P04-04L-E3Vishay / Siliconix |
MOSFET P-CH 40V 110A TO263 |
|
FDMS7678Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 17.5A/26A 8PQFN |
