类型 | 描述 |
---|---|
系列: | OptiMOS™-5 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 180A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.7mOhm @ 100A, 10V |
vgs(th) (最大值) @ id: | 4.1V @ 270µA |
栅极电荷 (qg) (max) @ vgs: | 195 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 840 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 313W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TO263-7 |
包/箱: | TO-263-7, D²Pak (6 Leads + Tab) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVMFS6H864NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 6.7A/21A 5DFN |
|
DN3525N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 250V 360MA TO243AA |
|
NTMS4503NR2GRochester Electronics |
MOSFET N-CH 28V 9A 8SOIC |
|
FDC365PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 35V 4.3A SUPERSOT6 |
|
IPP65R190C7FKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 13A TO220-3 |
|
IXTB30N100LWickmann / Littelfuse |
MOSFET N-CH 1000V 30A PLUS264 |
|
DMP2033UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.2A TSOT-26 |
|
FQA35N40Rochester Electronics |
MOSFET N-CH 400V 35A TO3P |
|
IPP60R190C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20.2A TO220-3 |
|
RRQ030P03HZGTRROHM Semiconductor |
MOSFET P-CH 30V 3A TSMT6 |
|
SFI9Z24TURochester Electronics |
P-CHANNEL POWER MOSFET |
|
BUK755R2-40B,127Rochester Electronics |
PFET, 75A I(D), 40V, 0.0052OHM, |
|
BSC097N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 46A TDSON-8-6 |