English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DTMOSIV |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 650mOhm @ 3.5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 350µA |
| 栅极电荷 (qg) (max) @ vgs: | 16 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 490 pF @ 300 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 30W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220SIS |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AOTF11N60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO220-3F |
|
STD95N4F3STMicroelectronics |
MOSFET N-CH 40V 80A DPAK |
|
IRFI630BTURochester Electronics |
N-CHANNEL POWER MOSFET |
|
SUD23N06-31-BE3Vishay / Siliconix |
MOSFET N-CH 60V 9.1A/21.4A DPAK |
|
IPB80N06S2LH5ATMA4Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |
|
STU2LN60K3STMicroelectronics |
MOSFET N CH 600V 2A IPAK |
|
IPDD60R150G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 16A HDSOP-10 |
|
SPD02N60S5BTMA1Rochester Electronics |
MOSFET N-CH 600V 1.8A TO252-3 |
|
IRL610ARochester Electronics |
MOSFET N-CH 200V 3.3A TO220-3 |
|
PSMN015-100P,127Nexperia |
MOSFET N-CH 100V 75A TO220AB |
|
NVTFS6H854NWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 9.5A/44A 8WDFN |
|
APT38F80B2Roving Networks / Microchip Technology |
MOSFET N-CH 800V 41A T-MAX |
|
FQA24N60Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
