类型 | 描述 |
---|---|
系列: | HTMOS™ |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | 5V |
rds on (max) @ id, vgs: | 400mOhm @ 100mA, 5V |
vgs(th) (最大值) @ id: | 2.4V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 4.3 nC @ 5 V |
vgs (最大值): | 10V |
输入电容 (ciss) (max) @ vds: | 290 pF @ 28 V |
场效应管特征: | - |
功耗(最大值): | 50W (Tj) |
工作温度: | -55°C ~ 225°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | 8-CDIP-EP |
包/箱: | 8-CDIP Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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