English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 46A (Ta), 50A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 1.7mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 65 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2994 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 6.2W (Ta), 83W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-DFN-EP (3.3x3.3) |
| 包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMS5P02R2GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.95A 8SOIC |
|
IPI60R190C6XKSA1Rochester Electronics |
MOSFET N-CH 600V 20.2A TO262-3 |
|
DMN10H220LE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 2.3A SOT223 |
|
FCPF11N60TRochester Electronics |
11A, 600V, 0.38OHM, N-CHANNEL, |
|
NTMFS5C604NLT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
IPB029N06N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 120A D2PAK |
|
AOW14N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 14A TO262 |
|
STB3NK60ZT4STMicroelectronics |
MOSFET N-CH 600V 2.4A D2PAK |
|
IXTX120P20TWickmann / Littelfuse |
MOSFET P-CH 200V 120A PLUS247-3 |
|
NDF04N62ZGRochester Electronics |
MOSFET N-CH 620V 4.4A TO220FP |
|
PSMN040-100MSEXNexperia |
MOSFET N-CH 100V 30A LFPAK33 |
|
TSM220NB06LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 8A/35A 8PDFN |
|
CWDM305N TR13 PBFREECentral Semiconductor |
MOSFET N-CH 30V 5.8A 8SOIC |
