English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.4Ohm @ 1A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 11 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 325 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 56.8W (Tc) |
| 工作温度: | -50°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-251-3 |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NDF02N60ZGRochester Electronics |
MOSFET N-CH 600V 2.4A TO220-3 |
|
SQS460ENW-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 8A PPAK1212-8W |
|
RTL035N03FRATRROHM Semiconductor |
MOSFET N-CH 30V 3.5A TUMT6 |
|
AON7409Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 16A/32A 8DFN |
|
NTP27N06GRochester Electronics |
MOSFET N-CH 60V 27A TO220AB |
|
FDU8796Rochester Electronics |
MOSFET N-CH 25V 35A IPAK |
|
SUP60030E-GE3Vishay / Siliconix |
MOSFET N-CH 80V 120A TO220AB |
|
BSP322PL6327HTSA1Rochester Electronics |
MOSFET P-CH 100V 1A SOT223-4 |
|
IRF9Z30PBFVishay / Siliconix |
MOSFET P-CH 50V 18A TO220AB |
|
IAUZ40N10S5N130ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 40A 8TSDSON-33 |
|
IPG20N06S2L-35AATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN67D7L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 210MA SOT23-3 |
|
IPB100N08S207ATMA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
