English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | E |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 180mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 96 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1451 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 179W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB80P04P4L04ATMA1Rochester Electronics |
OPTLMOS P-CHANNEL POWER MOSFET |
|
TN5335N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 350V 230MA TO243AA |
|
FDMC2514SDCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 24A/40A DLCOOL33 |
|
TK20V60W,LVQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A 4DFN |
|
IRF9620STRLPBFVishay / Siliconix |
MOSFET P-CH 200V 3.5A D2PAK |
|
FDN5632N-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 1.7A SUPERSOT3 |
|
IPD025N06NATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-3 |
|
IXTX4N300P3HVWickmann / Littelfuse |
MOSFET N-CH 3000V 4A TO247PLUSHV |
|
STW77N65M5STMicroelectronics |
MOSFET N-CH 650V 69A TO247-3 |
|
NTMFS5H419NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 29A/155A 5DFN |
|
SI4686DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 18.2A 8SO |
|
AUIRFP4310ZRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
IRF7455TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 15A 8SO |
