English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 180mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 106 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2322 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 208W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPI90R1K2C3XKSA1Rochester Electronics |
MOSFET N-CH 900V 5.1A TO262-3 |
|
BSZ150N10LS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 40A 8TSDSON |
|
IRFBE20PBF-BE3Vishay / Siliconix |
MOSFET N-CH 800V 1.8A TO220AB |
|
PMN42XPEAHNexperia |
MOSFET P-CH 20V 5.7A 6TSOP |
|
NTE2374NTE Electronics, Inc. |
MOSFET N-CHANNEL 200V 18A TO220 |
|
FDB20AN06A0Rochester Electronics |
MOSFET N-CH 60V 9A/45A TO263AB |
|
IAUC120N04S6N013ATMA1IR (Infineon Technologies) |
IAUC120N04S6N013ATMA1 |
|
IRF830ALPBFVishay / Siliconix |
MOSFET N-CH 500V 5A I2PAK |
|
STW40N90K5STMicroelectronics |
MOSFET N-CH 900V 40A TO247 |
|
CSD17306Q5ATexas Instruments |
MOSFET N-CH 30V 24A/100A 8VSON |
|
BSC028N06NSSCATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TDSON |
|
APT4F120SRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 4A D3PAK |
|
IXFH400N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 400A TO247AD |
