English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 10V |
| rds on (max) @ id, vgs: | 1.6mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 1.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 625 nC @ 10 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 22000 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 6.25W (Ta), 104W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFU9024NPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 11A IPAK |
|
SI2371EDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 4.8A SOT-23 |
|
R6012FNJTLROHM Semiconductor |
MOSFET N-CH 600V 12A LPT |
|
SUP40012EL-GE3Vishay / Siliconix |
MOSFET N-CH 40V 150A TO220AB |
|
STD12NF06L-1STMicroelectronics |
MOSFET N-CH 60V 12A IPAK |
|
IPD50P04P4L11ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 50A TO252-3 |
|
SIHJ6N65E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 5.6A PPAK SO-8 |
|
MTDF2N06HDR2Rochester Electronics |
MOSFET N-CH 60V 1.5A MICRO8 |
|
RQ1C065UNTRROHM Semiconductor |
MOSFET N-CH 20V 6.5A TSMT8 |
|
STP110N55F6STMicroelectronics |
MOSFET N-CH 55V 110A TO220 |
|
PMN55ENEHNexperia |
MOSFET N-CH 60V 4.5A 6TSOP |
|
FDP050AN06A0Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 18A/80A TO220-3 |
|
FDD26AN06A0Rochester Electronics |
MOSFET N-CH 60V 7A/36A TO252AA |
