English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 24A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 44 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1515 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 29.8W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIHB11N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 12A D2PAK |
|
HUFA76445S3SRochester Electronics |
MOSFET N-CH 60V 75A D2PAK |
|
SI2374DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 4.5A/5.9A SOT23 |
|
STP14NM65NSTMicroelectronics |
MOSFET N-CH 650V 12A TO220AB |
|
CSD13383F4TTexas Instruments |
MOSFET N-CH 12V 2.9A 3PICOSTAR |
|
IPL60R1K5C6SATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 3A THIN-PAK |
|
IRF9Z10PBF-BE3Vishay / Siliconix |
MOSFET P-CH 60V 6.7A TO220AB |
|
BSS192,135Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
TK14G65W5,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 13.7A D2PAK |
|
IRFTS8342TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 8.2A 6TSOP |
|
TPH3205WSBQATransphorm |
GANFET N-CH 650V 35A TO247-3 |
|
IPA60R800CEXKSA1Rochester Electronics |
MOSFET N-CH 600V 5.6A TO220-FP |
|
FDPF12N50FTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 11.5A TO220F |
