类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | GaNFET (Gallium Nitride) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | Surface Mount |
供应商设备包: | Die |
包/箱: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPI60R380C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO262-3 |
|
PSMN5R8-30LL,115Rochester Electronics |
MOSFET N-CH 30V 40A 8DFN |
|
MCH6431-P-TL-HRochester Electronics |
MOSFET N-CH 30V 5A MCPH6 |
|
STD3NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 2.5A DPAK |
|
IXFQ50N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 50A TO3P |
|
IRLR024TRPBFVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
STB30NF10T4STMicroelectronics |
MOSFET N-CH 100V 35A D2PAK |
|
APT5020SVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 26A D3PAK |
|
IXFB40N110Q3Wickmann / Littelfuse |
MOSFET N-CH 1100V 40A PLUS264 |
|
IRLR2905ZPBFRochester Electronics |
MOSFET N-CH 55V 42A DPAK |
|
ZVP2110ASTZZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 230MA E-LINE |
|
BSS127Rectron USA |
MOSFET N-CHANNEL 600V 21MA SOT23 |
|
HUFA76419D3STRochester Electronics |
N-CHANNEL LOGIC LEVEL ULTRAFET |