类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, eGaN® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | GaNFET (Gallium Nitride) |
漏源电压 (vdss): | 15 V |
电流 - 连续漏极 (id) @ 25°c: | 3.4A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 5V |
rds on (max) @ id, vgs: | 26mOhm @ 1.5A, 5V |
vgs(th) (最大值) @ id: | 2.5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 1.1 nC @ 5 V |
vgs (最大值): | +6V, -4V |
输入电容 (ciss) (max) @ vds: | 118 pF @ 7.5 V |
场效应管特征: | Standard |
功耗(最大值): | - |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | Die |
包/箱: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSP373E6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVTFS5C680NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 7.82A/20A 8WDFN |
|
FDB6021PRochester Electronics |
MOSFET P-CH 20V 28A TO263AB |
|
SIAA00DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 20.1A/40A PPAK |
|
APT66M60B2Roving Networks / Microchip Technology |
MOSFET N-CH 600V 70A T-MAX |
|
CPH3430-TL-ERochester Electronics |
MOSFET N-CH 60V 2A 3CPH |
|
DMN6140L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.6A SOT-23 |
|
TJ20S04M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 20A DPAK |
|
TPCA8056-H,LQ(MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 48A 8SOP |
|
DMT5015LFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 9.1A 6UDFN |
|
SQJ850EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 24A PPAK SO-8 |
|
BSC019N02KSGAUMA1IR (Infineon Technologies) |
MOSFET N-CH 20V 30A/100A TDSON |
|
MTP6P20ERochester Electronics |
MOSFET P-CH 200V 6A TO220AB |