类型 | 描述 |
---|---|
系列: | U-MOSVI-H |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 32A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 7.3mOhm @ 16A, 10V |
vgs(th) (最大值) @ id: | 2.3V @ 500µA |
栅极电荷 (qg) (max) @ vgs: | 43 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3365 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 1.6W (Ta), 45W (Tc) |
工作温度: | 150°C |
安装类型: | Surface Mount |
供应商设备包: | 8-SOP Advance (5x5) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STF15N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 11A TO220FP |
|
IRL540NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 36A D2PAK |
|
SPD18P06PGRochester Electronics |
SPD18P06 - 20V-250V P-CHANNEL PO |
|
IPA65R380C6XKSA1Rochester Electronics |
MOSFET N-CH 650V 10.6A TO220-111 |
|
TSM9435CS RLGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 30V 5.3A 8SOP |
|
TPH8R903NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 20A 8SOP |
|
APT19M120JRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 19A ISOTOP |
|
IPD096N08N3GBTMA1Rochester Electronics |
MOSFET N-CH 80V 73A TO252-3 |
|
IRFIBF20GPBFVishay / Siliconix |
MOSFET N-CH 900V 1.2A TO220-3 |
|
NDP7061Rochester Electronics |
MOSFET N-CH 60V 64A TO220-3 |
|
AUIRF1404ZLRochester Electronics |
MOSFET N-CH 40V 160A TO262 |
|
STF5N105K5STMicroelectronics |
MOSFET N-CH 1050V 3A TO220 |
|
SQ4064EY-T1_GE3Vishay / Siliconix |
MOSFET N-CHANNEL 60V 12A 8SOIC |