English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | C3M™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 68A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 15V |
| rds on (max) @ id, vgs: | 43mOhm @ 41.4A, 15V |
| vgs(th) (最大值) @ id: | 3.6V @ 11.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 111 nC @ 15 V |
| vgs (最大值): | +15V, -4V |
| 输入电容 (ciss) (max) @ vds: | 3424 pF @ 1000 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 277W (Tc) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263-7 |
| 包/箱: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMTH10H010LCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 108A TO220AB |
|
IRF6215STRLPBFIR (Infineon Technologies) |
MOSFET P-CH 150V 13A D2PAK |
|
SPW11N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFI4229PBFIR (Infineon Technologies) |
MOSFET N-CH 250V 19A TO220AB |
|
NVMFS5C673NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 60V 50A 5DFN |
|
NDTL01N60ZT1GRochester Electronics |
MOSFET N-CH 600V 250MA SOT223 |
|
BUK9M12-60EXNexperia |
MOSFET N-CH 60V 54A LFPAK33 |
|
AUIRLR2703Rochester Electronics |
MOSFET N-CH 30V 20A DPAK |
|
NDBA170N06AT4HRochester Electronics |
MOSFET N-CH 60V 170A D2PAK |
|
FDB2710Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 50A D2PAK |
|
BSC042N03LSGRochester Electronics |
BSC042N03 - 12V-300V N-CHANNEL P |
|
FQT1N80TF-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 200MA SOT223-3 |
|
NDS352PRochester Electronics |
MOSFET P-CH 20V 850MA SUPERSOT3 |
