English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DTMOSIV-H |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30.8A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 98mOhm @ 9.4A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 1.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 65 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3000 pF @ 300 V |
| 场效应管特征: | Super Junction |
| 功耗（最大值）: | 240W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 4-DFN-EP (8x8) |
| 包/箱: | 4-VSFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD16327Q3Texas Instruments |
MOSFET N-CH 25V 60A 8VSON |
|
MTB30P06VRochester Electronics |
P-CHANNEL POWER MOSFET |
|
IRF644PBFVishay / Siliconix |
MOSFET N-CH 250V 14A TO220AB |
|
IPW60R199CPFKSA1Rochester Electronics |
600V COOLMOS N-CHANNEL |
|
VN2460N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 600V 160MA TO92-3 |
|
STD2N80K5STMicroelectronics |
MOSFET N-CH 800V 2A DPAK |
|
ISL9N310AD3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
ZXMN6A08GQTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3.8A SOT223 |
|
IRFR3806PBFRochester Electronics |
MOSFET N-CH 60V 43A DPAK |
|
ECH8419-TL-HRochester Electronics |
MOSFET N-CH 35V 9A 8ECH |
|
IRF3704SPBFRochester Electronics |
MOSFET N-CH 20V 77A D2PAK |
|
IPD90N04S402ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 90A TO252-3 |
|
IPU07N03LARochester Electronics |
MOSFET N-CH 25V 30A TO251-3 |
