类型 | 描述 |
---|---|
系列: | U-MOSVII-H |
包裹: | Tape & Reel (TR) |
零件状态: | Last Time Buy |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 13A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 11.6mOhm @ 6.5A, 10V |
vgs(th) (最大值) @ id: | 2.3V @ 200µA |
栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1350 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SOP |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TSM60NB190CF C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 18A ITO220S |
|
NTMFS4847NAT1GRochester Electronics |
MOSFET N-CH 30V 11.5A/85A 5DFN |
|
SI4848DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 150V 2.7A 8SO |
|
IRFR014TRPBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
FDD86326Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 8A/37A DPAK |
|
STP85NF55LSTMicroelectronics |
MOSFET N-CH 55V 80A TO220AB |
|
IRFB13N50APBFVishay / Siliconix |
MOSFET N-CH 500V 14A TO220AB |
|
IRFZ48RPBFVishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
IRFBC40ASTRLPBFVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
|
IPB65R150CFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 22.4A D2PAK |
|
FDB8442-F085Rochester Electronics |
28A, 40V, 0.0029OHM, N-CHANNEL, |
|
RSH125N03TB1ROHM Semiconductor |
MOSFET N-CH 30V 12.5A 8SOP |
|
FDD4685Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 8.4A/32A DPAK |