English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSIX-H |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 87A (Ta), 49A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6mOhm @ 24.5A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 200µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2700 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.8W (Ta), 81W (Tc) |
| 工作温度: | 175°C |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOP Advance (5x5) |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR1018EPBFRochester Electronics |
MOSFET N-CH 60V 56A DPAK |
|
IPB180N03S4L-H0Rochester Electronics |
IPB180N03 - 20V-40V N-CHANNEL AU |
|
FDMT800120DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 120V 20A 8DLCOOL88 |
|
R6547KNZ4C13ROHM Semiconductor |
MOSFET N-CH 650V 47A TO247 |
|
FDD24AN06LA0-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 7.1A/40A TO252AA |
|
FDP79N15Rochester Electronics |
MOSFET N-CH 150V 79A TO220-3 |
|
IRFB41N15DPBFRochester Electronics |
MOSFET N-CH 150V 41A TO220AB |
|
BUK9675-55A,118Nexperia |
MOSFET N-CH 55V 20A D2PAK |
|
SSM3K347R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 38V 2A SOT23F |
|
IXFA3N120Wickmann / Littelfuse |
MOSFET N-CH 1200V 3A TO263 |
|
DMN4025LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 8-SOIC |
|
TK35A65W5,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 35A TO220SIS |
|
BSS159NL6906Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
