English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | π-MOSIV |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4V |
| rds on (max) @ id, vgs: | 3Ohm @ 10mA, 4V |
| vgs(th) (最大值) @ id: | 1.1V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 9.3 pF @ 3 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 100mW (Ta) |
| 工作温度: | 150°C |
| 安装类型: | Surface Mount |
| 供应商设备包: | CST3 |
| 包/箱: | SC-101, SOT-883 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTA12N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 12A TO263AA |
|
PMPB15XPHNexperia |
MOSFET P-CH 12V 8.2A DFN2020MD-6 |
|
BSZ042N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 17A/40A TSDSON |
|
STFW20N65M5STMicroelectronics |
MOSFET N-CH 650V 18A ISOWATT |
|
IPP070N08N3GXKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
R6002ENDTLROHM Semiconductor |
MOSFET N-CH 600V 1.7A CPT3 |
|
FDS8896Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 15A 8SOIC |
|
DMN62D0UWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 340MA SOT323 |
|
FDMS8848NZRochester Electronics |
MOSFET N-CH 40V 22.8A/49A 8PQFN |
|
PSMN7R6-60XSQRochester Electronics |
MOSFET N-CH 60V 51.5A TO220F |
|
FDB15N50_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTB45N06T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 45A D2PAK |
|
IXFN94N50P2Wickmann / Littelfuse |
MOSFET N-CH 500V 68A SOT227B |
