English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DTMOSIV-H |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 61.8A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 40mOhm @ 21A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 3.1mA |
| 栅极电荷 (qg) (max) @ vgs: | 135 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 6500 pF @ 300 V |
| 场效应管特征: | Super Junction |
| 功耗（最大值）: | 400W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ZXMP10A16KTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 3A TO252-3 |
|
SI2337DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 80V 2.2A SOT23-3 |
|
SCT3080ALHRC11ROHM Semiconductor |
SICFET N-CH 650V 30A TO247N |
|
SSM3K15ACT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA CST3 |
|
NVMFS5C404NWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 53A/378A 5DFN |
|
NVMFS6H801NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 23A/157A 5DFN |
|
SCTW35N65G2VSTMicroelectronics |
SICFET N-CH 650V 45A HIP247 |
|
IPP100N04S4H2AKSA1Rochester Electronics |
MOSFET N-CH 40V 100A TO220-3 |
|
DMT47M2SFVWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V PWRDI3333 |
|
2N7002Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 115MA SOT-23 |
|
IRF9310TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 20A 8SO |
|
IPP65R310CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A TO220-3 |
|
IPP80R280P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO220-3 |
