类型 | 描述 |
---|---|
系列: | POWER MOS 7® |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 35A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 170mOhm @ 17.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 2.5mA |
栅极电荷 (qg) (max) @ vgs: | 100 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 4500 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 500W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-264 [L] |
包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AUIRF4905IR (Infineon Technologies) |
MOSFET P-CH 55V 74A TO220AB |
|
AOTF8T50PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 8A TO220-3F |
|
SQ3427EV-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 5.3A 6TSOP |
|
IPB120N10S405ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A D2PAK |
|
FDP3682Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 6A/32A TO220-3 |
|
NVMFS5C442NWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 29A/140A 5DFN |
|
IPA100N08N3GXKSA1Rochester Electronics |
MOSFET N-CH 80V 40A TO220-3-111 |
|
NTLJS4114NTAGRochester Electronics |
MOSFET N-CH 30V 3.6A 6WDFN |
|
AOTF380A60CLAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO220F |
|
DMP2021UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 9A 6UDFN |
|
FDMA7672Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IXTT30N50L2Wickmann / Littelfuse |
MOSFET N-CH 500V 30A TO268 |
|
NTE455NTE Electronics, Inc. |
MOSFET-DUAL GATE N-CH |