English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 8.5mOhm @ 40A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 170W (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263-2 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PSMN7R0-100BS,118Nexperia |
MOSFET N-CH 100V 100A D2PAK |
|
SI4430BDY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 14A 8SO |
|
RSQ035N06HZGTRROHM Semiconductor |
MOSFET N-CH 60V 3.5A TSMT6 |
|
IPB80P03P4-05ATMA1Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
PSMN2R4-30YLDXNexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
2SK3484-AZRenesas Electronics America |
MOSFET N-CH 100V 16A TO251 |
|
RD3G01BATTL1ROHM Semiconductor |
PCH -40V -15A POWER MOSFET - RD3 |
|
SIHG052N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 48A TO247AC |
|
IRLTS6342TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 8.3A 6TSOP |
|
NVATS5A106PLZT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CHANNEL 40V 33A ATPAK |
|
IRF9Z14PBFVishay / Siliconix |
MOSFET P-CH 60V 6.7A TO220AB |
|
SIR182DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
|
SI7129DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 35A PPAK1212-8 |
