English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DTMOSIV |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 27.6A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 110mOhm @ 13.8A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 1.6mA |
| 栅极电荷 (qg) (max) @ vgs: | 75 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3000 pF @ 300 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 230W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MCH3479-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.5A SC70 |
|
BUK7Y7R6-40EXNexperia |
MOSFET N-CH 40V 79A LFPAK56 |
|
UF3C065080B7SUnitedSiC |
SICFET P-CH 650V 27A D2PAK-7 |
|
CSD19531Q5ATTexas Instruments |
MOSFET N-CH 100V 100A 8VSON |
|
SPU03N60C3BKMA1Rochester Electronics |
MOSFET N-CH 600V 3.2A TO251-3 |
|
SFP9634Rochester Electronics |
MOSFET P-CH 250V 5A TO220-3 |
|
FQPF1P50Rochester Electronics |
MOSFET P-CH 500V 1.03A TO220F |
|
MIC94052BC6TRRochester Electronics |
P-CHANNEL POWER MOSFET |
|
STP80NF06STMicroelectronics |
MOSFET N-CH 60V 80A TO220AB |
|
PSMN9R0-25MLC,115Nexperia |
MOSFET N-CH 25V 55A LFPAK33 |
|
IPD65R420CFDAATMA1Rochester Electronics |
MOSFET N-CH 650V 8.7A TO252-3 |
|
IPI320N20N3GAKSA1Rochester Electronics |
MOSFET N-CH 200V 34A TO262-3 |
|
APT30F60JRoving Networks / Microchip Technology |
MOSFET N-CH 600V 31A ISOTOP |
