类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 35mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 500 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 45W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252-2 |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFR024TRLPBFVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
DMT43M8LFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 87A POWERDI3333 |
|
IRLR120TRVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
STL42P6LLF6STMicroelectronics |
MOSFET P-CH 60V 42A POWERFLAT |
|
BSC080N03MSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 13A/53A TDSON |
|
CSD13306WTexas Instruments |
MOSFET N-CH 12V 3.5A 6DSBGA |
|
FCH110N65F-F155Rochester Electronics |
MOSFET N-CH 650V 35A TO247 |
|
RQ3E150BNTBROHM Semiconductor |
MOSFET N-CH 30V 15A 8HSMT |
|
C3M0120090JWolfspeed - a Cree company |
SICFET N-CH 900V 22A D2PAK-7 |
|
IRFU1010ZPBFRochester Electronics |
MOSFET N-CH 55V 42A IPAK |
|
NTE2398NTE Electronics, Inc. |
MOSFET N-CHANNEL 500V 4.5A TO220 |
|
IPB60R280P6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13.8A D2PAK |
|
HUF76645S3STRochester Electronics |
N-CHANNEL POWER MOSFET |