类型 | 描述 |
---|---|
系列: | - |
包裹: | Cut Tape (CT)Tape & Box (TB) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 500mA |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 500 mA |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 400 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 600 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | Axial |
供应商设备包: | Axial |
工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ES2FAHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 2A DO214AC |
|
ES2LJHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO214AA |
|
V8P15HM3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 8A TO277A |
|
V15P15-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 15A TO277A |
|
1SS321,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL SCHOTTKY BARRIER DI |
|
UPR15/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 150V 2.5A DO216 |
|
BY203-20STAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCH 1.2KV 250MA SOD57 |
|
HS3KB M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO214AA |
|
STPSC10H065BY-TRSTMicroelectronics |
AUTOMOTIVE 650 V POWER SCHOTTKY |
|
BYP35A05Diotec Semiconductor |
DIODE STD D13X10.7W 50V 35A |
|
S2GHR5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 2A DO214AA |
|
1N4151W-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 150MA SOD123 |
|
VS-E5PX6012L-N3Vishay General Semiconductor – Diodes Division |
DIODE FREDS 1200V 60A TO-247 |