类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 1000 V |
电流 - 平均整流 (io): | 5A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 5 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 20 µA @ 1000 V |
电容@vr, f: | 50pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | DO-201AD, Axial |
供应商设备包: | DO-201AD |
工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NSR01F30MXT5GRochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 0.1A, |
|
SS36B-F1-0000HF |
DIODE SCHOTTKY 60V 3A DO214AA |
|
S8JC V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 8A DO214AB |
|
SK110-LPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 100V 1A DO214AA |
|
BAS140WE6327HTSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 40V 120MA SOD323 |
|
MUR160S M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO214AA |
|
VS-20ETS08FP-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 20A TO220FP |
|
VS-SD703C20S20LVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2KV 700A DO200AB |
|
V35PW45HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 35A SLIMDPAK |
|
SS13-M3/61TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 1A 30V DO-214AC |
|
RSFKL RQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 500MA SUBSMA |
|
1N4151WS-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 150MA SOD323 |
|
VS-SD703C25S30LVishay General Semiconductor – Diodes Division |
DIODE GP 2.5KV 790A DO200AB |