类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 16000 V |
电流 - 平均整流 (io): | 350mA |
电压 - 正向 (vf) (max) @ if: | 14 V @ 350 mA |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 5 µA @ 16000 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | Axial |
供应商设备包: | HVM |
工作温度 - 结: | -20°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SS1P6LHM3/85AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 1A DO220AA |
|
1N5820-E3/54Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 3A DO201AD |
|
VS-1N2135RAVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 60A DO203AB |
|
ESH2CA R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 1A DO214AC |
|
PMEG100T050ELPEZNexperia |
DIODE SCHOTTKY 100V 5A CFP15B |
|
SBRT15M50AP5-7DZetex Semiconductors (Diodes Inc.) |
DIODE SBR 50V 15A POWERDI5 |
|
VS-8ETL06STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
|
SR815 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 8A DO201AD |
|
IDL08G65C5XUMA2IR (Infineon Technologies) |
DIODE SCHOTTKY 650V 8A VSON-4 |
|
BAS21-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 200MA SOT23 |
|
VS-85HF40Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 85A DO203AB |
|
PMEG6020ELR115Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
APT30D40BGRoving Networks / Microchip Technology |
DIODE GEN PURP 400V 30A TO247 |