类型 | 描述 |
---|---|
系列: | Z-Rec® |
包裹: | Tube |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 11A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 3 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 50 µA @ 600 V |
电容@vr, f: | 155pF @ 0V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-220-2 |
供应商设备包: | TO-220-2 |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SD125SB45A.TSMC Diode Solutions |
DIODE SCHOTTKY 45V 15A DIE |
|
1N4007WEIC Semiconductor, Inc. |
STANDARD SOD123FL T/R 3000 |
|
UPS115UE3/TR7Roving Networks / Microchip Technology |
DIODE SCHOTTKY 15V 1A POWERMITE |
|
SSL12 R3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 1A DO214AC |
|
SS210L RVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 2A SUB SMA |
|
RB168MM-30TFTRROHM Semiconductor |
RB168MM-30TF IS THE HIGH RELIABI |
|
MURS160-E3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
|
VS-8EVH06-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE 600V SLIMDPAK |
|
S12GC R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 12A DO214AB |
|
SK16B R5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 1A DO214AA |
|
VS-HFA08TB120-M3Vishay General Semiconductor – Diodes Division |
DIODE FRED 1.2KV 8A TO220AC |
|
1SS413CT,L3FToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 20V 50MA SOD882 |
|
MURH10060GeneSiC Semiconductor |
DIODE GEN PURP 600V 100A D-67 |