English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Gen-III |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 650 V |
| 电流 - 平均整流 (io): | 10A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 1.7 V @ 10 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | 0 ns |
| 电流 - 反向泄漏@ vr: | 60 µA @ 650 V |
| 电容@vr, f: | 327pF @ 1V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-2 |
| 供应商设备包: | TO-220-2 |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
US1B R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO214AC |
|
RFV8BGE6STLROHM Semiconductor |
SUPER FAST RECOVERY DIODE - RFV8 |
|
RS1M M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A DO214AC |
|
BY550-400Diotec Semiconductor |
DIODE STD D5.4X7.5 400V 5A |
|
S3K V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO214AB |
|
VS-SD1100C20LVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2KV 1170A B-43 |
|
SFM14PL-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 1A 200V SOD-123FL |
|
B350B-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 3A DO214AA |
|
S5GBHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 5A DO214AA |
|
RS1PDHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE 100V 1A DO-220AA |
|
SDM03U40-7Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 30MA SOD523 |
|
BAT5402VH6327XTSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 30V 200MA SC79-2 |
|
VB20120S-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 120V 20A TO263AB |
