类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 650 V |
电流 - 平均整流 (io): | 10A |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 10 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 250 µA @ 650 V |
电容@vr, f: | 300pF @ 1V, 1MHz |
安装类型: | Surface Mount |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
供应商设备包: | DPAK |
工作温度 - 结: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
VS-70HFL60S02Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 70A DO203AB |
|
B290Q-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 90V 2A SMB |
|
V15P45-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 15A 45V TO-277A |
|
VS-150U120DVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 150A DO205 |
|
VS-1N2133RAVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 60A DO203AB |
|
ES3BHR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |
|
CMS10(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 40V 1A MFLAT |
|
182NQ030R-1SMC Diode Solutions |
180A, 30V, PRM1-1, POWER MODULES |
|
P600UDiotec Semiconductor |
DIODE STD D8X7.5 1400V 6A |
|
RS1KLSHRVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1.2A SOD123 |
|
AU1PG-M3/84AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1A DO220AA |
|
LL101B-GS08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 30MA SOD80 |
|
D4810N22TVFXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 2.2KV 4810A |