English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 40 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 410 mV @ 1 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 41 ns |
| 电流 - 反向泄漏@ vr: | 2 mA @ 40 V |
| 电容@vr, f: | 150pF @ 1V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | SOD-123 |
| 供应商设备包: | SOD-123A |
| 工作温度 - 结: | 125°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CES520,L3FToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 200MA ESC |
|
RSX501L-20TE25ROHM Semiconductor |
DIODE SCHOTTKY 20V 5A PMDS |
|
BAT42W-G3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD123 |
|
1N4933GP-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
|
VS-16F10Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 16A DO203AA |
|
CD2010-B140J.W. Miller / Bourns |
DIODE SCHOTTKY 40V 1A 2010 |
|
ES2BA R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO214AC |
|
FSV20100VSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 20A TO277-3 |
|
MUR360SB R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO214AA |
|
HS1GAL M3GTSC (Taiwan Semiconductor) |
50NS, 1A, 400V, HIGH EFFICIENT R |
|
VB20150SG-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 20A TO263AB |
|
NTE581NTE Electronics, Inc. |
R-SI 400V 8A FAST REC |
|
P600D-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
