类型 | 描述 |
---|---|
系列: | Amp+™ |
包裹: | Tube |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 650 V |
电流 - 平均整流 (io): | 12A |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 12 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 30 µA @ 650 V |
电容@vr, f: | 572pF @ 1V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-247-2 |
供应商设备包: | TO-247-2 |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MBRD835LT4GRochester Electronics |
SCHOTTKY BARRIER RECTIFIER, 35 V |
|
CDBD2SC21200-GComchip Technology |
DIODE SIC 2A 1200V TO-263/D2PAK |
|
KYZ35K1Diotec Semiconductor |
DIODE STD D12.77X6.6Z 100V 35A |
|
BAQ34-GS08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 60V 200MA SOD80 |
|
PT800ADiotec Semiconductor |
DIODE STD TO-220AC 50V 8A |
|
BYG21K-E3/TR3Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.5A |
|
RS2D-M3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1.5A DO214AA |
|
BAS16XV2T1GRochester Electronics |
RECTIFIER DIODE, 0.2A, 100V |
|
ST10100SMC Diode Solutions |
DIODE SCHOTTKY 100V TO220AC |
|
MBRB10100TRSMC Diode Solutions |
DIODE SCHOTTKY 100V D2PAK |
|
VSS8D3M15HM3/HVishay General Semiconductor – Diodes Division |
3A, 150V, SLIMSMAW TRENCH SKY RE |
|
UG2DA-F1-3000HF |
DIODE GEN PURP 200V 2A DO214AC |
|
B340LB-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 3A SMB |