类型 | 描述 |
---|---|
系列: | Amp+™ |
包裹: | Tube |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 1200 V |
电流 - 平均整流 (io): | 15A |
电压 - 正向 (vf) (max) @ if: | 1.6 V @ 15 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 30 µA @ 1.2 kV |
电容@vr, f: | 962pF @ 1V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-247-2 |
供应商设备包: | TO-247-2 |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
VS-SD1053C30S30LVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 3KV 920A DO200AB |
|
1N4006NTE Electronics, Inc. |
R-SI 800V 1A |
|
RGP02-15E-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.5KV 500MA DO204 |
|
FFP08S60STUSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 8A TO220-2L |
|
BAS19-E3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 200MA SOT23 |
|
AS1PMHM3/84AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.5A DO220 |
|
STTH1512GSTMicroelectronics |
DIODE GEN PURP 1.2KV 15A D2PAK |
|
GF1DRochester Electronics |
RECTIFIER DIODE, 1A, 200V, DO-21 |
|
FR304G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO201AD |
|
ES1D R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
VS-10TQ045-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 10A TO-220AC |
|
S2A-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
MURS140-E3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |