类型 | 描述 |
---|---|
系列: | GaN |
包裹: | Tray |
零件状态: | Active |
晶体管型: | HEMT |
频率: | 3GHz |
获得: | 13dB |
电压测试: | 28 V |
额定电流(安培): | - |
噪声系数: | - |
电流测试: | 300 mA |
功率输出: | 60W |
额定电压: | 84 V |
包/箱: | 440193 |
供应商设备包: | 440193 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BLF898SUAmpleon |
RF MOSFET LDMOS 50V SOT539B |
|
NE3521M04-T2-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
MRF8VP13350NR3NXP Semiconductors |
TRANS RF LDMOS 350W 50V |
|
CPH6312-TL-ERochester Electronics |
PCH 4V DRIVE SERIES |
|
MMRF5014HR5NXP Semiconductors |
FET RF 125V 2.5GHZ NI360 |
|
MRFG35003NT1NXP Semiconductors |
FET RF 15V 3.55GHZ 1.5-PLD |
|
MCH3312-EBM-TL-ERochester Electronics |
PCH 4V DRIVE SERIES |
|
BLF7G27LS-150P,118Ampleon |
RF FET LDMOS 65V 16DB SOT539B |
|
MW7IC2020NT1NXP Semiconductors |
RF MOSFET LDMOS 28V 24PQFN |
|
MRF6V14300HSR5Rochester Electronics |
RF POWER FIELD-EFFECT TRANSISTOR |
|
BLF878,112Rochester Electronics |
RF POWER N-CHANNEL, MOSFET |
|
BLP10H605ZAmpleon |
RF FET LDMOS 104V 22DB 12VDFN |
|
BLP10H660PGYAmpleon |
RF MOSFET LDMOS 50V 4-HSOP |